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Nanya Technology NT8GC64B8HB0NS-DI 8GB
Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB vs Nanya Technology NT2GC64B88B0NS-CG 2GB

总分
star star star star star
Nanya Technology NT8GC64B8HB0NS-DI 8GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB

总分
star star star star star
Nanya Technology NT2GC64B88B0NS-CG 2GB

Nanya Technology NT2GC64B88B0NS-CG 2GB

差异 规格 评论

差异

Nanya Technology NT8GC64B8HB0NS-DI 8GB 需要考虑的原因
Nanya Technology NT8GC64B8HB0NS-DI 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.6 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Nanya Technology NT2GC64B88B0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B88B0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 47
    左右 -9% 更低的延时

规格

完整的技术规格清单
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    47 left arrow 43
  • 读取速度，GB/s
    11.6 left arrow 11.1
  • 写入速度，GB/s
    8.4 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2055 left arrow 1357

Nanya Technology NT8GC64B8HB0NS-DI 8GB RAM的比较

SK Hynix HMA851U6JJR6N-VK 4GB

Nanya Technology NT2GC64B88B0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT8GC64B8HB0NS-DI 8GB
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
Kingmax Semiconductor GSAH22F-18---------- 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3000C14-8GTZ 8GB
G Skill Intl F4-3000C14-8GTZ 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.AOOLF 4GB
Apacer Technology GD2.111881.002 4GB
Apacer Technology GD2.111881.002 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM