Kingston 99U5474-028.A00LF 4GB vs Micron Technology 18ADF2G72PZ-2G3B1 16GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Micron Technology 18ADF2G72PZ-2G3B1 16GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

更快的读取速度，GB/s

12.6 11.8

测试中的平均数值

Micron Technology 18ADF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ADF2G72PZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 39

左右 -22% 更低的延时
更快的写入速度，GB/s

8.7 6.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Micron Technology 18ADF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 32
读取速度，GB/s

12.6 11.8
写入速度，GB/s

6.8 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1954 2585

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965516-112.A00LF 16GB

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Golden Empire CL18-22-22 D4-3600 16GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

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Corsair CMK32GX4M4B3866C18 8GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology 18ASF2G72PDZ-2G3D1 16GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A1K43CBCBCRC 8GB

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Samsung M471B5273DH0-CH9 4GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston KHX3200C18D4/16G 16GB

Kingston KHX3200C18D4/16G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KYXC0V-MIH 16GB

Kingston KYXC0V-MIH 16GB

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Corsair CM2X1024-6400C4 1GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB