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Kingston 99U5474-037.A00LF 4GB
Asgard VML41UG-MIC1U22T1 8GB

Kingston 99U5474-037.A00LF 4GB vs Asgard VML41UG-MIC1U22T1 8GB

总分
star star star star star
Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

总分
star star star star star
Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异 规格 评论

差异

Kingston 99U5474-037.A00LF 4GB 需要考虑的原因
Kingston 99U5474-037.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 65
    左右 43% 更低的延时
Asgard VML41UG-MIC1U22T1 8GB 需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-037.A00LF 4GB
Asgard VML41UG-MIC1U22T1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 65
  • 读取速度，GB/s
    13.7 left arrow 16.4
  • 写入速度，GB/s
    7.8 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2102 left arrow 2041

Kingston 99U5474-037.A00LF 4GB RAM的比较

Kingston 99U5584-007.A00LF 4GB
Samsung M378B5273DH0-CH9 4GB

Asgard VML41UG-MIC1U22T1 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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