Kingston 99U5474-037.A00LF 4GB vs Samsung M471A2K43CB1-CTD 16GB

总分

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

总分

Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异规格评论

差异

Kingston 99U5474-037.A00LF 4GB

需要考虑的原因
Kingston 99U5474-037.A00LF 4GB

报告一个错误

Samsung M471A2K43CB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 -6% 更低的延时
更快的读取速度，GB/s

15.5 13.7

测试中的平均数值
更快的写入速度，GB/s

11.3 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-037.A00LF 4GB

Samsung M471A2K43CB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 35
读取速度，GB/s

13.7 15.5
写入速度，GB/s

7.8 11.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2102 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT425S6CFR6A-PB 2GB

AMD R538G1601S2LS 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Avant Technology J642GU42J7240NF 16GB

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