Kingston 99U5474-038.A00LF 4GB vs G Skill Intl F4-4133C19-8GTZKWC 8GB

总分

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

差异规格评论

差异

Kingston 99U5474-038.A00LF 4GB

需要考虑的原因
Kingston 99U5474-038.A00LF 4GB

报告一个错误

G Skill Intl F4-4133C19-8GTZKWC 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZKWC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 40

左右 -82% 更低的延时
更快的读取速度，GB/s

19 12.9

测试中的平均数值
更快的写入速度，GB/s

17.0 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 22
读取速度，GB/s

12.9 19.0
写入速度，GB/s

7.5 17.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2078 3929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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Kingston 99U5474-038.A00LF 4GB

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PNY Electronics PNY 2GB

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3600C17-4GVK 4GB

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Samsung M393B2G70BH0-CH9 16GB

Corsair CMR16GX4M2K4266C19 8GB

Corsair CMR16GX4M2K4266C19 8GB

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Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB