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Kingston 99U5474-038.A00LF 4GB
Samsung M471A5644EB0-CPB 2GB

Kingston 99U5474-038.A00LF 4GB vs Samsung M471A5644EB0-CPB 2GB

总分
star star star star star
Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分
star star star star star
Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

差异 规格 评论

差异

Kingston 99U5474-038.A00LF 4GB 需要考虑的原因
Kingston 99U5474-038.A00LF 4GB
报告一个错误
Samsung M471A5644EB0-CPB 2GB 需要考虑的原因
Samsung M471A5644EB0-CPB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 40
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    13.2 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5474-038.A00LF 4GB
Samsung M471A5644EB0-CPB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 28
  • 读取速度，GB/s
    12.9 left arrow 13.2
  • 写入速度，GB/s
    7.5 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2078 left arrow 1989

Kingston 99U5474-038.A00LF 4GB RAM的比较

Kingston 99U5474-041.A00LF 4GB
Golden Empire CL14-14-14 D4-2400 16GB

Samsung M471A5644EB0-CPB 2GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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Crucial Technology BLM8G40C18U4B.M8FE1 8GB
内存RAM