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Kingston 99U5584-001.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
比较
Kingston 99U5584-001.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
总分
Kingston 99U5584-001.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5584-001.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
更快的读取速度,GB/s
13.8
11.5
测试中的平均数值
更快的写入速度,GB/s
11.0
6.7
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston 99U5584-001.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
11.5
13.8
写入速度,GB/s
6.7
11.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1857
2690
Kingston 99U5584-001.A00LF 4GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905474-043.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
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Micron Technology 8ATF1G64HZ-2G3B2 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 8ATF1G64HZ-2G6B1 8GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-3333C16-8GVR 8GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston KHX2666C15/16GX 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMWX8GD3600C18W4 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Kingston 9965604-033.D00G 16GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
报告一个错误
×
Bug description
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