Kingston 99U5584-005.A00LF 4GB vs Corsair CM4X16GF3200C22S2 16GB

总分

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

总分

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

差异规格评论

差异

Kingston 99U5584-005.A00LF 4GB

需要考虑的原因
Kingston 99U5584-005.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 60

左右 33% 更低的延时

Corsair CM4X16GF3200C22S2 16GB

需要考虑的原因
Corsair CM4X16GF3200C22S2 16GB

报告一个错误

更快的读取速度，GB/s

15.6 13.2

测试中的平均数值
更快的写入速度，GB/s

12.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-005.A00LF 4GB

Corsair CM4X16GF3200C22S2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 60
读取速度，GB/s

13.2 15.6
写入速度，GB/s

7.8 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2125 2590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72PDZ-2G3A1 16GB

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Kingston SNY1600S11-4G-EDEG 4GB

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Micron Technology AFLD48VH1P 8GB

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Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

SK Hynix HMA851S6JJR6N-VK 4GB

SK Hynix HMA851S6JJR6N-VK 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB