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Kingston 99U5584-005.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FN 8GB

Kingston 99U5584-005.A00LF 4GB vs Crucial Technology CT8G4DFRA266.C8FN 8GB

总分
star star star star star
Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

总分
star star star star star
Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

差异 规格 评论

差异

Kingston 99U5584-005.A00LF 4GB 需要考虑的原因
Kingston 99U5584-005.A00LF 4GB
报告一个错误
Crucial Technology CT8G4DFRA266.C8FN 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA266.C8FN 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-005.A00LF 4GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.2 left arrow 15.5
  • 写入速度，GB/s
    7.8 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2125 left arrow 3091

Kingston 99U5584-005.A00LF 4GB RAM的比较

Kingston 99U5471-052.A00LF 8GB
Kingston 99U5474-026.A00LF 4GB

Crucial Technology CT8G4DFRA266.C8FN 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Samsung M393B5170FH0-CK0 4GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3200C14-8GTRS 8GB
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Kingston 99U5584-005.A00LF 4GB
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
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内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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内存RAM
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内存RAM
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G Skill Intl F4-3600C18-32GTZN 32GB
内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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