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Kingston 99U5584-005.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB

Kingston 99U5584-005.A00LF 4GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

差异 规格 评论

差异

Kingston 99U5584-005.A00LF 4GB 需要考虑的原因
Kingston 99U5584-005.A00LF 4GB
报告一个错误
Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 40
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-005.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 29
  • 读取速度，GB/s
    13.2 left arrow 15.8
  • 写入速度，GB/s
    7.8 left arrow 11.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2125 left arrow 2711

Kingston 99U5584-005.A00LF 4GB RAM的比较

Kingston 99U5471-052.A00LF 8GB
Kingston 99U5474-026.A00LF 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
Crucial Technology BLS8G4D26BFSC.16FD2 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Kingston 9905734-062.A00G 32GB
Kingston 9905734-062.A00G 32GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905743-044.A00G 16GB
Kingston 9905743-044.A00G 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9965589-037.D00G 8GB
Kingston 9965589-037.D00G 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905712-008.A00G 16GB
Kingston 9905712-008.A00G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Kingston 9965596-029.B00G 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Kingston 9905678-138.A00G 8GB
Kingston 9905678-138.A00G 8GB
内存RAM