Kingston 99U5584-007.A00LF 4GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

总分

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

总分

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

差异规格评论

差异

Kingston 99U5584-007.A00LF 4GB

需要考虑的原因
Kingston 99U5584-007.A00LF 4GB

报告一个错误

更快的读取速度，GB/s

11.1 10.3

测试中的平均数值

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 -12% 更低的延时
更快的写入速度，GB/s

8.1 5.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-007.A00LF 4GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 33
读取速度，GB/s

11.1 10.3
写入速度，GB/s

5.8 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1807 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Lexar Co Limited LD4AS016G-H3200GST 16GB

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Crucial Technology BL8G32C16U4BL.M8FE1 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

V-GEN D4S4GL32A16TS 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Corsair CMW32GX4M4C3200C16 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB