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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C19-8GTRS 8GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-4266C19-8GTRS 8GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-4266C19-8GTRS 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTRS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 -43% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.6 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 23
  • 读取速度，GB/s
    17.6 left arrow 19.6
  • 写入速度，GB/s
    12.0 left arrow 17.6
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 4100

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

G Skill Intl F4-4266C19-8GTRS 8GB RAM的比较

G Skill Intl F4-3600C19-16GSXKB 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Apacer Technology GD2.2229BH.001 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
Kingston 9905471-001.A01LF 2GB
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Crucial Technology BLS16G4D26BFSE.16FD 16GB
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内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
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G Skill Intl F4-3000C15-4GTZ 4GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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Kreton Corporation 51624xxxx68x35xxxx 2GB
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内存RAM
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kingston 9965745-002.A00G 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
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Corsair CMR32GX4M2C3200C16 16GB
内存RAM
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Kingston 9905403-437.A01LF 4GB
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G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM