Kingston 99U5584-010.A00LF 4GB vs Kingston 9905678-026.A00G 8GB

总分

Kingston 99U5584-010.A00LF 4GB

Kingston 99U5584-010.A00LF 4GB

总分

Kingston 9905678-026.A00G 8GB

Kingston 9905678-026.A00G 8GB

差异规格评论

差异

Kingston 99U5584-010.A00LF 4GB

需要考虑的原因
Kingston 99U5584-010.A00LF 4GB

报告一个错误

Kingston 9905678-026.A00G 8GB

需要考虑的原因
Kingston 9905678-026.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

15.1 12.8

测试中的平均数值
更快的写入速度，GB/s

8.3 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-010.A00LF 4GB

Kingston 9905678-026.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

12.8 15.1
写入速度，GB/s

7.1 8.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1937 2171

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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ASint Technology SSA302G08-EGN1C 4GB

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Kingston KVR533D2N4 512MB

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Samsung M393A2K40BB2-CTD 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Crucial Technology CT4G4DFS8266.C8FB 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9965596-016.B01G 8GB

Kingston 9965596-016.B01G 8GB