Kingston 99U5595-005.A00LF 2GB vs Corsair CMT16GX4M2Z3200C16 8GB

总分

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

总分

Corsair CMT16GX4M2Z3200C16 8GB

Corsair CMT16GX4M2Z3200C16 8GB

差异规格评论

差异

Kingston 99U5595-005.A00LF 2GB

需要考虑的原因
Kingston 99U5595-005.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Corsair CMT16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMT16GX4M2Z3200C16 8GB

报告一个错误

更快的读取速度，GB/s

17.3 13.2

测试中的平均数值
更快的写入速度，GB/s

14.5 7.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 99U5595-005.A00LF 2GB

Corsair CMT16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

13.2 17.3
写入速度，GB/s

7.3 14.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1489 3395

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Corsair CMT16GX4M2Z3200C16 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Crucial Technology BLS8G4D240FSA.M16FAD 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Corsair CMK32GX4M2L3000C15 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

V-Color Technology Inc. TC416G24D817 16GB

V-Color Technology Inc. TC416G24D817 16GB