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Kingston 99U5595-005.A00LF 2GB
Samsung M378A2G43AB3-CWE 16GB
比较
Kingston 99U5595-005.A00LF 2GB vs Samsung M378A2G43AB3-CWE 16GB
总分
Kingston 99U5595-005.A00LF 2GB
总分
Samsung M378A2G43AB3-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5595-005.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
35
左右 26% 更低的延时
需要考虑的原因
Samsung M378A2G43AB3-CWE 16GB
报告一个错误
更快的读取速度,GB/s
17.6
13.2
测试中的平均数值
更快的写入速度,GB/s
12.1
7.3
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Kingston 99U5595-005.A00LF 2GB
Samsung M378A2G43AB3-CWE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
35
读取速度,GB/s
13.2
17.6
写入速度,GB/s
7.3
12.1
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1489
3221
Kingston 99U5595-005.A00LF 2GB RAM的比较
Kingston 99P5471-002.AOOLF 4GB
Kingston 99P5471-002.A00LF 2GB
Samsung M378A2G43AB3-CWE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9905678-102.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-3600C17-16GTZKW 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMD8GX4M2B3000C15 4GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Kingston 9965525-144.A00LF 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CM4B8G1J2400A16K2-ON 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
AMD AE34G2139U2 4GB
Micron Technology AFLD44EK2P 4GB
Samsung M395T2863QZ4-CF76 1GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
Samsung M471B5273DH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
SK Hynix HMT325S6BFR8C-H9 2GB
Transcend Information JM3200HLE-32GK 16GB
报告一个错误
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