Kingston ACR16D3LS1KBG/8G 8GB vs G Skill Intl F4-2133C15-16GIS 16GB

总分

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

总分

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

差异规格评论

差异

Kingston ACR16D3LS1KBG/8G 8GB

需要考虑的原因
Kingston ACR16D3LS1KBG/8G 8GB

报告一个错误

G Skill Intl F4-2133C15-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GIS 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 50

左右 -52% 更低的延时
更快的读取速度，GB/s

15.6 10.6

测试中的平均数值
更快的写入速度，GB/s

10.8 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KBG/8G 8GB

G Skill Intl F4-2133C15-16GIS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

50 33
读取速度，GB/s

10.6 15.6
写入速度，GB/s

7.8 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1899 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR4 2800 2OZ 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Corsair CML8GX3M2A1866C9 4GB

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V-Color Technology Inc. TA48G32S816SK 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Golden Empire 2GB DDR2 800 CAS=4 2GB

Golden Empire 2GB DDR2 800 CAS=4 2GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB

Crucial Technology BLS8G4D30BESBK.8FB 8GB