Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs G Skill Intl F4-2133C15-16GIS 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时
更快的读取速度，GB/s

16.7 15.6

测试中的平均数值
更快的写入速度，GB/s

11.8 10.8

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

G Skill Intl F4-2133C15-16GIS 16GB

需要考虑的原因
G Skill Intl F4-2133C15-16GIS 16GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2133C15-16GIS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

16.7 15.6
写入速度，GB/s

11.8 10.8
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2756 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 8ATF1G64HZ-3G2J1 8GB

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Kingston 9905403-437.A01LF 4GB

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Kingston 9905403-431.A00LF 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMR32GX4M4C3200C16 8GB

Corsair CMR32GX4M4C3200C16 8GB