Lexar Co Limited LD4AU016G-H3200GST 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB vs Chun Well Technology Holding Limited D4U0832161B 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 34

左右 3% 更低的延时
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Chun Well Technology Holding Limited D4U0832161B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832161B 8GB

报告一个错误

更快的读取速度，GB/s

19.1 17.8

测试中的平均数值
更快的写入速度，GB/s

12.6 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 34
读取速度，GB/s

17.8 19.1
写入速度，GB/s

12.5 12.6
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3285 3178

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905702-120.A00G 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Avant Technology J641GU42J5213ND 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

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Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB