Kingston ACR16D3LS1KNG/4G 4GB vs Corsair CMD128GX4M8A2666C15 16GB

总分

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

总分

Corsair CMD128GX4M8A2666C15 16GB

Corsair CMD128GX4M8A2666C15 16GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 37

左右 19% 更低的延时

Corsair CMD128GX4M8A2666C15 16GB

需要考虑的原因
Corsair CMD128GX4M8A2666C15 16GB

报告一个错误

更快的读取速度，GB/s

13.6 12.5

测试中的平均数值
更快的写入速度，GB/s

13.6 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/4G 4GB

Corsair CMD128GX4M8A2666C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 37
读取速度，GB/s

12.5 13.6
写入速度，GB/s

7.8 13.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1917 3215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

Terabyte Co Ltd RCX2-16G3600A 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-2800C15-16GRKD 16GB