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Samsung M471A5143EB1-CRC 4GB
Kingston ACR16D3LS1KNG/4G 4GB

Samsung M471A5143EB1-CRC 4GB vs Kingston ACR16D3LS1KNG/4G 4GB

总分
star star star star star
Samsung M471A5143EB1-CRC 4GB

Samsung M471A5143EB1-CRC 4GB

总分
star star star star star
Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

差异 规格 评论

差异

Samsung M471A5143EB1-CRC 4GB 需要考虑的原因
Samsung M471A5143EB1-CRC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 12.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5% 更高的带宽
Kingston ACR16D3LS1KNG/4G 4GB 需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 95
    左右 -217% 更低的延时
  • 更快的写入速度，GB/s
    7.8 left arrow 7.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5143EB1-CRC 4GB
Kingston ACR16D3LS1KNG/4G 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    95 left arrow 30
  • 读取速度，GB/s
    15.8 left arrow 12.5
  • 写入速度，GB/s
    7.3 left arrow 7.8
  • 内存带宽，mbps
    19200 left arrow 12800
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1518 left arrow 1917

Samsung M471A5143EB1-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston ACR16D3LS1KNG/4G 4GB RAM的比较

Kingston MSI16D3LS1KBG/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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