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Kingston ACR16D3LS1NGG/2G 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston ACR16D3LS1NGG/2G 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分
star star star star star
Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异 规格 评论

差异

Kingston ACR16D3LS1NGG/2G 2GB 需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB
报告一个错误
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB 需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 84
    左右 -127% 更低的延时
  • 更快的读取速度，GB/s
    21.4 left arrow 5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1NGG/2G 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    84 left arrow 37
  • 读取速度，GB/s
    5.0 left arrow 21.4
  • 写入速度，GB/s
    3.6 left arrow 14.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    878 left arrow 3448

Kingston ACR16D3LS1NGG/2G 2GB RAM的比较

Kingston 99U5469-053.A00LF 4GB
EVGA 8GX-D4-3200-MR 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Panram International Corporation PUD42133C154G2VS 4GB
Panram International Corporation PUD42133C154G2VS 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2933C14-8GFX 8GB
G Skill Intl F4-2933C14-8GFX 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KHX3466C19D4/16G 16GB
Kingston KHX3466C19D4/16G 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston HP24D4U7S8MBP-4 4GB
Kingston HP24D4U7S8MBP-4 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM