Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CB8GS2666.C8ET 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 14

测试中的平均数值

Crucial Technology CB8GS2666.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2666.C8ET 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 60

左右 -54% 更低的延时
更快的写入速度，GB/s

9.1 2,168.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CB8GS2666.C8ET 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 39
读取速度，GB/s

4,595.2 14.0
写入速度，GB/s

2,168.2 9.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

941 2221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Kingston 9905403-134.A00LF 2GB

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Hewlett-Packard 7EH98AA#ABB 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Micron Technology CT8G4DFD8213.16FA2 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Kingston 9965516-112.A00LF 16GB

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Crucial Technology BL16G36C16U4RL.M16FE 16GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT4G4SFS824A.C8FF 4GB

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