Kingston ACR16D3LS1NGG/2G 2GB vs G Skill Intl F4-4000C18-8GTZSW 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

G Skill Intl F4-4000C18-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 84

左右 -180% 更低的延时
更快的读取速度，GB/s

17.2 5

测试中的平均数值
更快的写入速度，GB/s

17.0 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

G Skill Intl F4-4000C18-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 30
读取速度，GB/s

5.0 17.2
写入速度，GB/s

3.6 17.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 8ATF1G64AZ-2G3A1 8GB

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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SK Hynix HMT41GS6MFR8C-H9 8GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Apacer Technology 78.CAGSZ.4070B 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston 99U5704-001.A00G 4GB

Kingston 99U5704-001.A00G 4GB

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Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

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Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB