Samsung M3 78T3354BZ0-CCC 256MB vs Apacer Technology 78.CAGSZ.4070B 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Apacer Technology 78.CAGSZ.4070B 8GB

Apacer Technology 78.CAGSZ.4070B 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.9

测试中的平均数值

Apacer Technology 78.CAGSZ.4070B 8GB

需要考虑的原因
Apacer Technology 78.CAGSZ.4070B 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 46

左右 -109% 更低的延时
更快的写入速度，GB/s

13.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.CAGSZ.4070B 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 22
读取速度，GB/s

2,909.8 16.9
写入速度，GB/s

1,519.2 13.4
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CF7 2GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Samsung V-GeN D4S4GL32A8TL 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CM2X1024-8500C5D 1GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

Crucial Technology BLS16G4S240FSD.16FBD 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

Crucial Technology CT16G4DFRA32A.M16FR 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Crucial Technology CT16G4SFRA32A.M16FR 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905625-139.A00G 16GB

Kingston 9905625-139.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2933C17S4/8G 8GB

Kingston KHX2933C17S4/8G 8GB