Kingston ACR256X64D3S1333C9 2GB vs Corsair CMR32GX4M2A2666C16 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Corsair CMR32GX4M2A2666C16 16GB

需要考虑的原因
Corsair CMR32GX4M2A2666C16 16GB

报告一个错误

更快的读取速度，GB/s

15.5 11.9

测试中的平均数值
更快的写入速度，GB/s

12.1 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Corsair CMR32GX4M2A2666C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

11.9 15.5
写入速度，GB/s

8.5 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2970

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston XJV223-MIE 16GB

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SK Hynix HMA82GS6DJR8N-VK 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M378B5673EH1-CF8 2GB

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Samsung M471A1K43BB1-CTD 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Corsair CMK8GX4M1D2666C16 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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Corsair CMK64GX5M2B5200C40 32GB

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PNY Electronics PNY 2GB

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Corsair CMW32GX4M2A2666C16 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Samsung T471A1K43CB1-CRC 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

SK Hynix HMA81GR7AFR8N-UH 8GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-4266C19-8GTZR 8GB

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A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB