Kingston ACR256X64D3S1333C9 2GB vs Corsair CMRX8GD3000C16R4D 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Corsair CMRX8GD3000C16R4D 8GB

需要考虑的原因
Corsair CMRX8GD3000C16R4D 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

18.3 11.9

测试中的平均数值
更快的写入速度，GB/s

14.0 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Corsair CMRX8GD3000C16R4D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

11.9 18.3
写入速度，GB/s

8.5 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 3148

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Micron Technology 4ATF51264HZ-2G6E1 4GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB

Micron Technology 8ATF1G64AZ-2G3H1 8GB