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Samsung M395T5160QZ4-CE66 2GB
Kingston 9905712-010.A00G 16GB
比较
Samsung M395T5160QZ4-CE66 2GB vs Kingston 9905712-010.A00G 16GB
总分
Samsung M395T5160QZ4-CE66 2GB
总分
Kingston 9905712-010.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
更快的读取速度,GB/s
2
12.3
测试中的平均数值
更快的写入速度,GB/s
2,072.7
10.8
测试中的平均数值
需要考虑的原因
Kingston 9905712-010.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
75
左右 -168% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Kingston 9905712-010.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
28
读取速度,GB/s
2,730.3
12.3
写入速度,GB/s
2,072.7
10.8
内存带宽,mbps
5300
21300
Other
描述
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
858
2002
Samsung M395T5160QZ4-CE66 2GB RAM的比较
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
Kingston 9905712-010.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Avant Technology F6451U64F9333G 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMH32GX4M2D3600C18 16GB
Kingston 9965516-049.A00LF 8GB
G Skill Intl F4-4000C16-16GVK 16GB
Kingston 9965525-155.A00LF 8GB
Corsair CMK16GX4M4B3200C15 4GB
Samsung M395T2863QZ4-CF76 1GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C16-8GVK 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3000C16-8GISB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Mushkin MR[ABC]4U320GJJM32G 32GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A2K43EB1-CWE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16G3200CL22 16GB
报告一个错误
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