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Nanya Technology M2F8G64CB8HC9N-DI 8GB
A-DATA Technology AO1P32MCST2-BW4S 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB vs A-DATA Technology AO1P32MCST2-BW4S 16GB

总分
star star star star star
Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

总分
star star star star star
A-DATA Technology AO1P32MCST2-BW4S 16GB

A-DATA Technology AO1P32MCST2-BW4S 16GB

差异 规格 评论

差异

Nanya Technology M2F8G64CB8HC9N-DI 8GB 需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
A-DATA Technology AO1P32MCST2-BW4S 16GB 需要考虑的原因
A-DATA Technology AO1P32MCST2-BW4S 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 37
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 33
  • 读取速度，GB/s
    13.9 left arrow 17.6
  • 写入速度，GB/s
    8.6 left arrow 15.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2395 left arrow 3510

Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较

SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB

A-DATA Technology AO1P32MCST2-BW4S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
内存RAM
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Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C18-32GTZR 32GB
G Skill Intl F4-3600C18-32GTZR 32GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C16-16GTZN 16GB
G Skill Intl F4-3600C16-16GTZN 16GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KHX2133C14/16G 16GB
Kingston KHX2133C14/16G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C16-32GTRG 32GB
G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Kingston KHX2933C15D4/8GX 8GB
Kingston KHX2933C15D4/8GX 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Corsair CMW64GX4M4D3600C18 16GB
Corsair CMW64GX4M4D3600C18 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Apacer Technology 78.D1GS7.B7B0B 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
G Skill Intl F4-2800C17-8GIS 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
Crucial Technology CT8G4SFRA32A.M8FRS 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3466C16-8GVK 8GB
G Skill Intl F4-3466C16-8GVK 8GB
内存RAM