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Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-2800C17-8GIS 8GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
G Skill Intl F4-2800C17-8GIS 8GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
15.3
测试中的平均数值
更快的写入速度,GB/s
12.5
10.2
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
G Skill Intl F4-2800C17-8GIS 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
33
左右 -3% 更低的延时
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
32
读取速度,GB/s
17.8
15.3
写入速度,GB/s
12.5
10.2
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
2706
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2800C17-8GIS 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-076.A00LF 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Kingston 2GB-DDR2 800Mhz 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston 9965596-016.B01G 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-16GIS 16GB
Hexon Technology Pte Ltd HEXON 1GB
Transcend Information JM2400HSB-8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Samsung M471B5273CH0-CH9 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Crucial Technology CB8GU2400.C8JT 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C19-8GVRB 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Samsung M471B5173DB0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
报告一个错误
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Bug description
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