Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Samsung M471B5273CH0-CH9 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 48

左右 38% 更低的延时

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

8.9 8.8

测试中的平均数值
更快的写入速度，GB/s

5.9 5.6

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Samsung M471B5273CH0-CH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

30 48
读取速度，GB/s

8.8 8.9
写入速度，GB/s

5.6 5.9
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1344 1420

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ81UG8BBU0-GN-F 8GB

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Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-3466C16-8GTZKW 8GB

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Unifosa Corporation HU564404EP0200 4GB

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Crucial Technology CT16G4SFD8266 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston KF3200C18D4/8G 8GB

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A-DATA Technology DDR2 800G 2GB

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Kingston 99U5663-007.A00G 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 9965600-005.A00G 16GB

Kingston 9965600-005.A00G 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Corsair CMW64GX4M8C3000C15 8GB

Corsair CMW64GX4M8C3000C15 8GB