RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX2666C15D4/4G 4GB

ASint Technology SSA302G08-EGN1C 4GB vs Kingston KHX2666C15D4/4G 4GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 32
    左右 19% 更低的延时
Kingston KHX2666C15D4/4G 4GB 需要考虑的原因
Kingston KHX2666C15D4/4G 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX2666C15D4/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 32
  • 读取速度，GB/s
    12.6 left arrow 17.1
  • 写入速度，GB/s
    9.5 left arrow 13.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2929

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston KHX2666C15D4/4G 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston KHX2666C15D4/4G 4GB
Kingston KHX2666C15D4/4G 4GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Kingston 9905701-011.A00G 16GB
Kingston 9905701-011.A00G 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3300C16-4GRKD 4GB
G Skill Intl F4-3300C16-4GRKD 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Kingston 9965596-036.B00G 8GB
Kingston 9965596-036.B00G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP26D4U6D8ME-16X 16GB
Kingston HP26D4U6D8ME-16X 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Kingston 9905743-043.A00G 16GB
Kingston 9905743-043.A00G 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK32GX4M4B3466C16 8GB
Corsair CMK32GX4M4B3466C16 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston KHX2933C17D4/8G 8GB
Kingston KHX2933C17D4/8G 8GB
内存RAM