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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Samsung M471B5273CH0-CH9 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    30 left arrow 48
    Intorno 38% latenza inferiore
Samsung M471B5273CH0-CH9 4GB Motivi da considerare
Samsung M471B5273CH0-CH9 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    8.9 left arrow 8.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    5.9 left arrow 5.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Samsung M471B5273CH0-CH9 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    30 left arrow 48
  • Velocità di lettura, GB/s
    8.8 left arrow 8.9
  • Velocità di scrittura, GB/s
    5.6 left arrow 5.9
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1344 left arrow 1420

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Confronto tra le RAM

G Skill Intl F4-4000C17-8GTZRB 8GB

Samsung M471B5273CH0-CH9 4GB Confronto tra le RAM

G Skill Intl F3-1600C9-4GRSL 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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