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Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-16GIS 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.7
    测试中的平均数值
G Skill Intl F4-2400C17-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 92
    左右 -197% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 31
  • 读取速度，GB/s
    2,105.4 left arrow 16.7
  • 写入速度，GB/s
    1,266.1 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    339 left arrow 2888

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

G Skill Intl F4-2400C17-16GIS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Kingston 9905403-500.A01LF 8GB
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Samsung M393B1G70QH0-YK0 8GB
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A-DATA Technology DDR4 2666 8GB
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Kingston HP698651-154-MCN 8GB
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INTENSO 5641152 4GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Micron Technology 4ATF51264AZ-2G3B1 4GB
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Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
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内存RAM
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Corsair CMH32GX4M2E3200C16 16GB
内存RAM
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Samsung M393B5170FH0-CK0 4GB
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Corsair CMR64GX4M8C3000C15 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM