Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

差异

  • 更高的内存带宽,mbps
    6400 left arrow 5300
    左右 1.21% 更高的带宽
  • 低于PassMark测试中的延时,ns
    67 left arrow 92
    左右 -37% 更低的延时
  • 更快的读取速度,GB/s
    2 left arrow 2
    测试中的平均数值
  • 更快的写入速度,GB/s
    1,273.3 left arrow 1,266.1
    测试中的平均数值

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时,ns
    92 left arrow 67
  • 读取速度,GB/s
    2,105.4 left arrow 2,857.8
  • 写入速度,GB/s
    1,266.1 left arrow 1,273.3
  • 内存带宽,mbps
    6400 left arrow 5300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    339 left arrow 344
RAM Latency Calculator
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最新比较