Nanya Technology M2N1G64TUH8D5F-AC 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

总分

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

差异规格评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB

需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB

报告一个错误

更高的内存带宽，mbps

6400 5300

左右 1.21% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

报告一个错误

低于PassMark测试中的延时，ns

67 92

左右 -37% 更低的延时
更快的读取速度，GB/s

2 2

测试中的平均数值
更快的写入速度，GB/s

1,273.3 1,266.1

测试中的平均数值

规格

完整的技术规格清单

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

92 67
读取速度，GB/s

2,105.4 2,857.8
写入速度，GB/s

1,266.1 1,273.3
内存带宽，mbps

6400 5300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

339 344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

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G Skill Intl F4-3200C15-8GTZKO 8GB

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