Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology BL16G26C16U4W.16FE 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Crucial Technology BL16G26C16U4W.16FE 16GB

需要考虑的原因
Crucial Technology BL16G26C16U4W.16FE 16GB

报告一个错误

更快的读取速度，GB/s

17.6 11.9

测试中的平均数值
更快的写入速度，GB/s

14.8 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL16G26C16U4W.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.9 17.6
写入速度，GB/s

8.5 14.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3687

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMA81GS6JJR8N-VK 8GB

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AMD R744G2400U1S-UO 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

SK Hynix HMA42GR7AFR4N-UH 16GB

SK Hynix HMA42GR7AFR4N-UH 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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G Skill Intl F4-3000C15-8GVKB 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB