Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology BLS16G4D30CEST.16FD 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology BLS16G4D30CEST.16FD 16GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Crucial Technology BLS16G4D30CEST.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D30CEST.16FD 16GB

报告一个错误

更快的读取速度，GB/s

17.4 11.9

测试中的平均数值
更快的写入速度，GB/s

13.5 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS16G4D30CEST.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.9 17.4
写入速度，GB/s

8.5 13.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 3413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T2953EZ3-CF7 1GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

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Kingston KP4T2F-PSB 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

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Kingston 99U5403-036.A00G 4GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB