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Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB

Swissbit MEU25664D6BC2EP-30 2GB vs Crucial Technology BL8G32C16U4WL.8FE 8GB

总分
star star star star star
Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

总分
star star star star star
Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

差异 规格 评论

差异

Swissbit MEU25664D6BC2EP-30 2GB 需要考虑的原因
Swissbit MEU25664D6BC2EP-30 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
Crucial Technology BL8G32C16U4WL.8FE 8GB 需要考虑的原因
Crucial Technology BL8G32C16U4WL.8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 68
    左右 -172% 更低的延时
  • 更快的写入速度，GB/s
    14.6 left arrow 1,944.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 25
  • 读取速度，GB/s
    3,973.0 left arrow 17.2
  • 写入速度，GB/s
    1,944.9 left arrow 14.6
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    673 left arrow 3414

Swissbit MEU25664D6BC2EP-30 2GB RAM的比较

Kingston KHX1600C9D3/2G 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB

Crucial Technology BL8G32C16U4WL.8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GVKD 16GB
G Skill Intl F4-3000C14-16GVKD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
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内存RAM
Samsung M395T5160QZ4-CE66 2GB
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内存RAM
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Kingston HP32D4U8S8ME-8XR 8GB
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内存RAM
Corsair CMX4GX3M1A1333C9 4GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Corsair CMK16GX4M2Z2666C16 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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SK Hynix HMA82GU6JJR8N-VK 16GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
内存RAM
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
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Samsung M391A2K43BB1-CRC 16GB
内存RAM