RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology CT8G4DFRA32A.M8FR 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Crucial Technology CT8G4DFRA32A.M8FR 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
34
左右 21% 更低的延时
需要考虑的原因
Crucial Technology CT8G4DFRA32A.M8FR 8GB
报告一个错误
更快的读取速度,GB/s
19.3
11.9
测试中的平均数值
更快的写入速度,GB/s
14.6
8.5
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
34
读取速度,GB/s
11.9
19.3
写入速度,GB/s
8.5
14.6
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1620
3249
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB RAM的比较
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KP223C-ELD 2GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT16G4SFRA266.C8FE 16GB
Peak Electronics 256X64M-67E 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9965525-010.A00LF 4GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Kingston 9905471-002.A00LF 2GB
Kingston KVR26N19D8/16 16GB
Crucial Technology CT51264BF160BJ.C8F 4GB
UMAX Technology D4-3200-16G-1024X8-L 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Kingston 99U5474-013.A00LF 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFD824A.C16FF 8GB
Samsung M393B1G70BH0-CK0 8GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
报告一个错误
×
Bug description
Source link