RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology CT8G4SFS824A.C8FBD1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
报告一个错误
低于PassMark测试中的延时,ns
36
62
左右 -72% 更低的延时
更快的读取速度,GB/s
12.6
7.4
测试中的平均数值
更快的写入速度,GB/s
8.1
5.9
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
36
读取速度,GB/s
7.4
12.6
写入速度,GB/s
5.9
8.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1612
2055
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Crucial Technology CT8G4SFS824A.C8FBD1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Samsung M3 78T5663RZ3-CF7 2GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KFG/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Crucial Technology CT8G4SFS824A.C8FBD1 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMH16GX4M2Z3600C18 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX3600C18D4/16GX 16GB
Kingston 99U5471-020.A00LF 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Samsung M471B5273DH0-CH9 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston KF3200C20S4/16G 16GB
报告一个错误
×
Bug description
Source link