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Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C15-4GVK 4GB
比较
Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-2666C15-4GVK 4GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
G Skill Intl F4-2666C15-4GVK 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 -13% 更低的延时
更快的读取速度,GB/s
15.9
11.9
测试中的平均数值
更快的写入速度,GB/s
11.8
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C15-4GVK 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
24
读取速度,GB/s
11.9
15.9
写入速度,GB/s
8.5
11.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
2508
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
G Skill Intl F4-2666C15-4GVK 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramaxel Technology RMT3170EB68F9W1600 4GB
Apacer Technology GD2.1527WH.002 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2666C15-4GVK 4GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT4G4SFS824A.C8FF 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston KHX2666C16D4/4G 4GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology W641GU42J5213NC 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Kingston 99U5403-036.A00G 4GB
Corsair CMD8GX4M2B3000C15 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9905734-018.A00G 16GB
Kingston 8ATF1G64AZ-2G3A141 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 2GB-DDR2 800Mhz 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix DDR2 800 2G 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-2400C17-16GIS 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMW16GX4M2C3200C14 8GB
报告一个错误
×
Bug description
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