Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-4000C18-16GTRG 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

G Skill Intl F4-4000C18-16GTRG 16GB

G Skill Intl F4-4000C18-16GTRG 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

G Skill Intl F4-4000C18-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTRG 16GB

报告一个错误

更快的读取速度，GB/s

19.7 11.9

测试中的平均数值
更快的写入速度，GB/s

16.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-4000C18-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.9 19.7
写入速度，GB/s

8.5 16.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3700

RAM Latency Calculator

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RAM 2

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Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

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Shenzen Recadata Storage Technology 8GB

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Kingston KHX2666C16S4/32G 32GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Corsair CMR32GX4M4D3200C16 8GB

Corsair CMR32GX4M4D3200C16 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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AMD R534G1601U1S-UO 4GB

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Corsair CMW16GX4M1Z3200C16 16GB

Corsair CMW16GX4M1Z3200C16 16GB

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Kingston KHX1866C9D3/8GX 8GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK64GX4M8A2133C13 8GB

Corsair CMK64GX4M8A2133C13 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston XW21KG-MIE2 8GB

Kingston XW21KG-MIE2 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB