Kingston ACR256X64D3S1333C9 2GB vs G Skill Intl F4-4266C19-8GTRG 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

G Skill Intl F4-4266C19-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

20.1 11.9

测试中的平均数值
更快的写入速度，GB/s

19.3 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-4266C19-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

11.9 20.1
写入速度，GB/s

8.5 19.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 4215

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CM4X8GD3000C16K4D 8GB

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G Skill Intl F4-4266C19-8GTRG 8GB

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Kingston KHX3333C16D4/16GX 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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AMD R5316G1609U2K 8GB

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Kingston 9905403-444.A00LF 4GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

AMD R538G1601U2S 8GB

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Corsair CMK16GX4M2A2800C16 8GB

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Kingston 99U5458-008.A00LF 4GB

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Micron Technology 16ATF2G64AZ-2G6J1 16GB