RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
35
左右 23% 更低的延时
更快的读取速度,GB/s
11.9
10
测试中的平均数值
更快的写入速度,GB/s
8.5
7.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
报告一个错误
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
35
读取速度,GB/s
11.9
10.0
写入速度,GB/s
8.5
7.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
2200
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-TF 16GB RAM的比较
Team Group Inc. ZEUS-2133 8GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Super Talent F24SB8GH 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-4GRKD 4GB
AMD AE34G1601U1 4GB
Kingston 9905702-012.A00G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFRA266.C8FE 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Mushkin 991586 2GB
G Skill Intl F4-3866C18-4GVK 4GB
Kingston 9905584-016.A00LF 4GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M393A8K40B21-CTC 64GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-4400C19-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZR 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL8G32C16U4RL.M8FE1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.B1GN3.4032B 4GB
报告一个错误
×
Bug description
Source link