RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
更快的读取速度,GB/s
12.2
11.9
测试中的平均数值
更快的写入速度,GB/s
9.6
8.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
11.9
12.2
写入速度,GB/s
8.5
9.6
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1620
2443
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-3333C16-8GTZKW 8GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BL8G32C16U4W.M8FE1 8GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL16G32C16S4B.16FE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
A-DATA Technology AD73I1C1674EV 4GB
Mushkin MRA4S293MMMF32G 32GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston X5H5PW-MIE 8GB
Corsair CM2X2048-6400C5DHX 2GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
报告一个错误
×
Bug description
Source link