Kingston ACR256X64D3S1333C9 2GB vs Maxsun MSD48G32Q3 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Maxsun MSD48G32Q3 8GB

Maxsun MSD48G32Q3 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 94

左右 71% 更低的延时

Maxsun MSD48G32Q3 8GB

需要考虑的原因
Maxsun MSD48G32Q3 8GB

报告一个错误

更快的读取速度，GB/s

13.5 11.9

测试中的平均数值
更快的写入速度，GB/s

11.3 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Maxsun MSD48G32Q3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 94
读取速度，GB/s

11.9 13.5
写入速度，GB/s

8.5 11.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 2771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C14S4/16G 16GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-2800C17-8GIS 8GB

Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3200C16-32GVK 32GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

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Samsung M471A5143SB1-CRC 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB