Kingston ACR256X64D3S1333C9 2GB vs Mushkin MRA4S266GHHF32G 32GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Mushkin MRA4S266GHHF32G 32GB

Mushkin MRA4S266GHHF32G 32GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时

Mushkin MRA4S266GHHF32G 32GB

需要考虑的原因
Mushkin MRA4S266GHHF32G 32GB

报告一个错误

更快的读取速度，GB/s

16.9 11.9

测试中的平均数值
更快的写入速度，GB/s

14.6 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Mushkin MRA4S266GHHF32G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

11.9 16.9
写入速度，GB/s

8.5 14.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3228

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MRA4S266GHHF32G 32GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Kingston 9905316-106.A02LF 1GB

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Kingston 99U5584-005.A00LF 4GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Corsair CMD64GX4M4B3466C16 16GB

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Kingston 9905458-017.A01LF 4GB

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Corsair CMK4GX4M1A2400C14 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905678-023.A00G 8GB

Kingston 9905678-023.A00G 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB