Kingston ACR256X64D3S1333C9 2GB vs Panram International Corporation PUD42400C154G2NJW 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Panram International Corporation PUD42400C154G2NJW 4GB

需要考虑的原因
Panram International Corporation PUD42400C154G2NJW 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

13.7 11.9

测试中的平均数值
更快的写入速度，GB/s

10.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Panram International Corporation PUD42400C154G2NJW 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.9 13.7
写入速度，GB/s

8.5 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2594

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMSX64GX4M4A2666C18 16GB

Corsair CMSX64GX4M4A2666C18 16GB