Kingston ACR256X64D3S1333C9 2GB vs Patriot Memory (PDP Systems) 3200 C18 Series 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

报告一个错误

更快的读取速度，GB/s

19.5 11.9

测试中的平均数值
更快的写入速度，GB/s

14.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

11.9 19.5
写入速度，GB/s

8.5 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Team Group Inc. TEAMGROUP-UD4-2933 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Crucial Technology CT8G4DFD8213.16FA11 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

Crucial Technology CT8G4DFD824A.C16FBR2 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB