Kingston ACR256X64D3S1333C9 2GB vs Samsung M378A5143EB1-CPB 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时

Samsung M378A5143EB1-CPB 4GB

需要考虑的原因
Samsung M378A5143EB1-CPB 4GB

报告一个错误

更快的读取速度，GB/s

14.6 11.9

测试中的平均数值
更快的写入速度，GB/s

10.8 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Samsung M378A5143EB1-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

11.9 14.6
写入速度，GB/s

8.5 10.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

Kingston HP24D4R7D4MAM-32 32GB

Kingston HP24D4R7D4MAM-32 32GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston HP24D4S7S8MBP-8 8GB

Kingston HP24D4S7S8MBP-8 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology BLS8G4D26BFSB.16FBR2 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK32GX4M4A2800C16 8GB

Corsair CMK32GX4M4A2800C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2666C19-8GRS 8GB

G Skill Intl F4-2666C19-8GRS 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Crucial Technology BLS8G4D240FSA.16FAR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Corsair CMK16GX4M2K4400C19 8GB

Corsair CMK16GX4M2K4400C19 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CM4X8GE2400C14K4 8GB

Corsair CM4X8GE2400C14K4 8GB