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Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB

Kingston ACR256X64D3S1333C9 2GB vs Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
  • 更快的读取速度，GB/s
    11.9 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 8500
    左右 1.25% 更高的带宽
Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5673FH0-CF8 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    11.9 left arrow 10.6
  • 写入速度，GB/s
    8.5 left arrow 6.8
  • 内存带宽，mbps
    10600 left arrow 8500
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-8500, 1.5V, CAS Supported: 5 6 7 8
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1066 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 1479

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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